| PART |
Description |
Maker |
| MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
| MT49H16M18C MT49H32M9C MT49H16M18CFM-XX MT49H32M9C |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
Micron Technology, Inc.
|
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| LTC2400 |
24-Bit uPower No Latency ADC in SO-8
24-Bit Power No Latency Delta-SigmaADC in SO-8
|
Linear Technology Corporation
|
| GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| IS61DDB21M36-250M3 IS61DDB22M18-250M3 |
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
|
Integrated Silicon Solution, Inc.
|
| LTC2410 LTC2410CGN 2410I LTC2410C LTC2410I LTC2410 |
From old datasheet system
24-Bit No Latency ADC with Differential Input and Differential Reference
24 Bit No Latency ADC
|
Linear Technology
|
| K7I321884C K7I323684C |
1Mx36 & 2Mx18 DDRII CIO b4 SRAM
|
Samsung semiconductor
|
| K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
